Description
High Sensitivity Infrared Silicon Photodiodes for Precision Detection
The Infrared Silicon Photodiodes by Exosens are designed to deliver exceptional performance in infrared detection applications. Utilizing high resistivity silicon, these PiN photodiodes achieve full depletion, which significantly enhances sensitivity and detection accuracy across the 800 nm to 1100 nm spectral range. This makes them ideal for applications requiring reliable infrared sensing, including laser detection, industrial monitoring, and scientific instrumentation.
Optimized Performance for Speed and Sensitivity
These photodiodes are available in specialized series to meet varying application needs. The 3T series is engineered for high-speed performance, making it suitable for fast signal detection and dynamic environments. The 4X series is optimized for maximum response at 1064 nm, a critical wavelength used in many laser-based systems. Additionally, the silicon thickness can be tailored to prioritize either response speed or sensitivity, offering flexibility to system designers.
Flexible Design and Integration
Infrared Silicon Photodiodes are available in multiple geometries, including single element and quadrant configurations. Quadrant photodiodes are offered with standard or narrow transition widths of 200 µm and 70 µm, enabling precise position sensing and beam alignment applications. This flexibility allows easy integration into complex electro-optical systems, including UAVs, surveillance platforms, and laboratory equipment.
Reliable Performance Across Industries
These photodiodes are widely used in defense and surveillance systems, industrial automation, nuclear facilities, and life science applications. Their robust design ensures consistent performance in demanding environments, while their high sensitivity and fast response make them a dependable choice for engineers and system integrators.
By combining precision engineering, customizable performance, and versatile design, the Infrared Silicon Photodiodes provide a powerful solution for advanced infrared detection needs.
Technical Specifications
| Parameter | Specification |
| Photodiode Type | PiN silicon photodiode |
| Spectral Range | 800 nm to 1100 nm |
| Material | High resistivity silicon |
| Depletion | Full depletion |
| Optimization Options | Speed or sensitivity tuning |
| Series Variants | 3T (high speed), 4X (1064 nm optimized) |
| Geometries | Single element, quadrant |
| Transition Width | 200 µm or 70 µm |
| Applications | Defense, industrial, scientific, nuclear |
Click here to learn more about similar products from Exosens
